ZXMN2F34FHTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Drain to Source Breakdown Voltage :

20V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Fall Time (Typ) :

4.2 ns

Power Dissipation-Max :

950mW Ta

Length :

3.04mm

Element Configuration :

Single

Turn On Delay Time :

2.65 ns

Rise Time :

4.2ns

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

277pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Power Dissipation :

1.4W

Resistance :

60mOhm

Width :

1.4mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Weight :

7.994566mg

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

800mV

Number of Pins :

3

Continuous Drain Current (ID) :

4A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±12V

Mount :

Surface Mount

Terminal Position :

Dual

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Height :

1.02mm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Turn-Off Delay Time :

9.9 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain Current-Max (Abs) (ID) :

4A

Lead Free :

Lead Free

Radiation Hardening :

No