ZXMC10A816N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Max Power Dissipation :

1.8W

Pin Count :

8

Rise Time :

5.2ns

Drain Current-Max (Abs) (ID) :

1.7A

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Pulsed Drain Current-Max (IDM) :

9.4A

Terminal Form :

Gull wing

Height :

1.5mm

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

497pF @ 50V

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

4.3 ns

ECCN Code :

EAR99

JESD-609 Code :

e3

Turn-Off Delay Time :

20 ns

Number of Terminations :

8

Published :

2005

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Power Dissipation :

2.1W

Radiation Hardening :

No

Factory Lead Time :

17 Weeks

Drain to Source Voltage (Vdss) :

100V

Width :

3.95mm

FET Feature :

Logic Level Gate

Weight :

73.992255mg

Terminal Position :

Dual

Length :

4.95mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

230m Ω @ 1A, 10V

Continuous Drain Current (ID) :

2A

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant