TSM680P06DPQ56 RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

60V

Number of Terminations :

6

Published :

2015

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

16.4nC @ 10V

Drain-source On Resistance-Max :

0.068Ohm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Transistor Application :

SWITCHING

Packaging :

Digi-Reel®

Rds On (Max) @ Id, Vgs :

68m Ω @ 6A, 10V

Factory Lead Time :

20 Weeks

Drain Current-Max (Abs) (ID) :

12A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

7.2 mJ

JESD-30 Code :

R-PDSO-F6

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 30V

Drain to Source Voltage (Vdss) :

60V

Power - Max :

3.5W

Terminal Form :

Flat

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED