TSM200N03DPQ33 RGG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Rds On (Max) @ Id, Vgs :

20m Ω @ 10A, 10V

Package / Case :

8-PowerWDFN

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Published :

2015

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Packaging :

Digi-Reel®

Factory Lead Time :

20 Weeks

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power - Max :

20W