TK18A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

270mOhm @ 9A, 10V

Number of Pins :

3

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Rds On Max :

270 mΩ

Supplier Device Package :

TO-220SIS

Published :

2009

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Power Dissipation-Max :

50W Tc

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Rise Time :

50ns

Current - Continuous Drain (Id) @ 25°C :

18A Ta

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

18A

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Series :

π-MOSVII

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

150°C

Operating Temperature :

150°C TJ

Fall Time (Typ) :

25 ns

Input Capacitance :

2.6nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Vgs (Max) :

±30V