T2N7002AK,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

Drain to Source Voltage (Vdss) :

60V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

200mA

Power Dissipation-Max :

320mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

320mW

Published :

1998

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

3.9Ohm @ 100mA, 10V

Supplier Device Package :

SOT-23

Drain to Source Resistance :

2.8Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

17pF

Input Capacitance (Ciss) (Max) @ Vds :

17pF @ 10V

Rds On Max :

3.9 Ω

FET Type :

N-Channel

Threshold Voltage :

1.1V

Vgs (Max) :

±20V

Height :

1.1mm

Turn-Off Delay Time :

7 ns

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

2 ns

Series :

U-MOSVII-H