STP45NF3LL
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- Mfr.Part #
- STP45NF3LL
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 45A TO220AB
- Stock
- 8,381
- In Stock ：
- 8,381
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 30V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 22.5A, 10V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Series :
- STripFET™ II
- Fall Time (Typ) :
- 21 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 70W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 45A
- Pin Count :
- 3
- Element Configuration :
- Single
- Rise Time :
- 100ns
- Drain-source On Resistance-Max :
- 0.02Ohm
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 45A
- Gate to Source Voltage (Vgs) :
- 16V
- Pulsed Drain Current-Max (IDM) :
- 180A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 25W
- Package / Case :
- TO-220-3
- Avalanche Energy Rating (Eas) :
- 241 mJ
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Turn On Delay Time :
- 17 ns
- Vgs (Max) :
- ±16V
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Base Part Number :
- STP45N
- Datasheets
- STP45NF3LL
N-Channel Tube 18m Ω @ 22.5A, 10V ±16V 800pF @ 25V 17nC @ 5V TO-220-3
STP45NF3LL Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 241 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 180A.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STP45NF3LL Features
the avalanche energy rating (Eas) is 241 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 180A.
STP45NF3LL Applications
There are a lot of STMicroelectronics
STP45NF3LL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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