STP140NF55
- Mfr.Part #
- STP140NF55
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO220AB
- Stock
- 5,754
- In Stock :
- 5,754
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™ II
- Voltage - Rated DC :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 142nC @ 10V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Current Rating :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn On Delay Time :
- 30 ns
- Base Part Number :
- STP140
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 125 ns
- ECCN Code :
- EAR99
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Power Dissipation :
- 300W
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Height :
- 15.75mm
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 10.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 150ns
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 55V
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 80A
- Fall Time (Typ) :
- 45 ns
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 300W Tc
- Resistance :
- 8mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Number of Elements :
- 1
- Width :
- 4.6mm
- Datasheets
- STP140NF55

N-Channel Tube 8m Ω @ 40A, 10V ±20V 5300pF @ 25V 142nC @ 10V TO-220-3
STP140NF55 Description
The "Single Feature SizeTM" strip-based technique used by STMicroelectronics to create this Power MOSFET is its most recent innovation. The resultant transistor has outstanding manufacturing reproducibility because to its rugged avalanche features, extremely high packing density for low on-resistance, and minimally critical alignment stages.
STP140NF55 Features
-
Drain to Source Breakdown Voltage: 55V
-
Gate to Source Voltage (Vgs): 20V
-
Continuous Drain Current (ID): 80A
-
Current Rating: 80A
STP140NF55 Applications
-
Motor control
-
High current, switching application
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