STFV4N150
- Mfr.Part #
- STFV4N150
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 4A TO220
- Stock
- 30,029
- In Stock :
- 30,029
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 1.5kV
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 4A
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 30ns
- Base Part Number :
- STFV4
- Transistor Element Material :
- SILICON
- Current Rating :
- 4A
- Power Dissipation-Max :
- 40W Tc
- Fall Time (Typ) :
- 45 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 1.5kV
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Continuous Drain Current (ID) :
- 4A
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 1500V
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 2A, 10V
- Drain-source On Resistance-Max :
- 7Ohm
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Series :
- PowerMESH™
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Power Dissipation :
- 40W
- Turn-Off Delay Time :
- 45 ns
- Mount :
- Through Hole
- Datasheets
- STFV4N150

N-Channel Tube 7 Ω @ 2A, 10V ±30V 1300pF @ 25V 50nC @ 10V 1500V TO-220-3 Full Pack, Isolated Tab
STFV4N150 Description
STFV4N150 is a 1500v N-channel very high voltage PowerMESH? MOSFET. Using the well-consolidated high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics. The creepage path is what makes this package unique from TO-220FP.
The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package meet all stringent safety norms in high voltage applications.
STFV4N150 Features
-
Typical RDS(on)=5|?
-
Avalanche ruggedness
-
Gate charge minimized
-
Very low intrinsic capacitances
-
High-speed switching
-
The fully plastic TO-220 package
-
The creepage distance path is>4mm
STFV4N150 Applications
-
Computers
-
Electric Vehicles
-
Welding
-
Aircraft
-
Automation
-
Medical
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