STF23NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

19.5A

Number of Pins :

3

Turn-Off Delay Time :

90 ns

Fall Time (Typ) :

40 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Power Dissipation :

35W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

21 ns

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Height :

16.4mm

Base Part Number :

STF23

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Avalanche Energy Rating (Eas) :

700 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Width :

4.6mm

Rise Time :

45ns

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

78A

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Series :

FDmesh™ II

Power Dissipation-Max :

35W Tc

Case Connection :

Isolated

Mount :

Through Hole

FET Type :

N-Channel