STF11N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Through Hole

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Drain-source On Resistance-Max :

0.85Ohm

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.6A, 10V

Packaging :

Tube

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Rise Time :

14ns

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Pins :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Base Part Number :

STF11

RoHS Status :

ROHS3 Compliant

Power Dissipation :

35W

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

11A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

44 ns

Operating Mode :

ENHANCEMENT MODE

Series :

SuperMESH3™

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Pulsed Drain Current-Max (IDM) :

40A

Avalanche Energy Rating (Eas) :

212 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

35W Tc

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

14.5 ns

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 50V

Case Connection :

Isolated

Pin Count :

3