STE110NS20FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

UNSPECIFIED

RoHS Status :

ROHS3 Compliant

Base Part Number :

STE1

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Power Dissipation :

500W

Drain to Source Breakdown Voltage :

200V

Additional Feature :

AVALANCHE RATED

Rise Time :

130ns

Terminal Finish :

Nickel (Ni)

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

24m Ω @ 50A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

500W Tc

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Series :

MESH OVERLAY™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

140 ns

Case Connection :

Isolated

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

504nC @ 10V

Voltage - Rated DC :

200V

Current Rating :

110A

Pin Count :

4

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

110A

Turn-Off Delay Time :

245 ns

Avalanche Energy Rating (Eas) :

750 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

4

Package / Case :

ISOTOP

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified