STD7NM80-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V

Turn-Off Delay Time :

35 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Width :

2.4mm

Height :

6.2mm

Pulsed Drain Current-Max (IDM) :

26A

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

20 ns

Power Dissipation-Max :

90W Tc

Continuous Drain Current (ID) :

6.5A

Packaging :

Tube

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.6mm

Power Dissipation :

90W

Element Configuration :

Single

Mount :

Surface Mount, Through Hole

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Number of Terminations :

3

Case Connection :

Isolated

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

240 mJ

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

800V

ECCN Code :

EAR99

Base Part Number :

STD7

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Rise Time :

8ns