SQ1902AEL-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

430mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

15 pF

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 10V

JESD-30 Code :

R-PDSO-G6

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

20V

Series :

Automotive, AEC-Q101, TrenchFET®

Drain-source On Resistance-Max :

0.415Ohm

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.78A

Rds On (Max) @ Id, Vgs :

415m Ω @ 660mA, 4.5V

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

780mA Tc

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® SC-70-6 Dual

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE