SMUN5213DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Pin Count :

6

Base Part Number :

MUN52**DW1T

Resistor - Emitter Base (R2) :

47k Ω

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Radiation Hardening :

No

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

187mW

Published :

2012

Reference Standard :

AEC-Q101

Number of Elements :

2

Surface Mount :

yes

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Resistor - Base (R1) :

47k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Number of Pins :

6

Min Operating Temperature :

-55°C