SIS932EDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Number of Channels :

2

FET Feature :

Standard

Turn-Off Delay Time :

32 ns

Power - Max :

2.6W Ta 23W Tc

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8 Dual

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

22mOhm @ 10A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 15V

Power Dissipation :

2.6W

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

6A

Drain to Source Resistance :

18mOhm

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® 1212-8 Dual

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Height :

1.17mm

FET Type :

2 N-Channel (Dual)

Published :

2017

RoHS Status :

ROHS3 Compliant