SIA975DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Rise Time :

22ns

Pin Count :

6

Transistor Element Material :

SILICON

Power Dissipation :

1.9W

Number of Elements :

2

Drain to Source Breakdown Voltage :

-12V

Resistance :

41mOhm

ECCN Code :

EAR99

REACH SVHC :

Unknown

Turn On Delay Time :

22 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 8V

Number of Terminations :

6

Threshold Voltage :

-400mV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

41m Ω @ 4.3A, 4.5V

Number of Pins :

6

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

32 ns

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Continuous Drain Current (ID) :

4.5A

Contact Plating :

Tin

Fall Time (Typ) :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 6V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

28.009329mg

Drain to Source Voltage (Vdss) :

12V

Base Part Number :

SIA975

Published :

2015

Max Power Dissipation :

7.8W

Lead Free :

Lead Free

Radiation Hardening :

No

Mount :

Surface Mount

Package / Case :

PowerPAK® SC-70-6 Dual

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Case Connection :

DRAIN