SIA923AEDJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SIA923

Number of Terminations :

6

Drain-source On Resistance-Max :

0.054Ohm

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 8V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2007

Weight :

28.009329mg

Number of Pins :

6

Case Connection :

DRAIN

Package / Case :

PowerPAK® SC-70-6 Dual

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Series :

TrenchFET®

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

15 ns

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

900mV @ 250μA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Power Dissipation :

7.8W

Fall Time (Typ) :

10 ns

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

4.5A

Factory Lead Time :

14 Weeks

Rise Time :

16ns

Gate to Source Voltage (Vgs) :

8V

Threshold Voltage :

-900mV

Turn-Off Delay Time :

30 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

54m Ω @ 3.8A, 4.5V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON