SI9945BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Published :

2011

Turn-Off Delay Time :

20 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.3A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5.3A

Number of Channels :

2

Pin Count :

8

Transistor Application :

SWITCHING

Length :

5mm

Number of Terminations :

8

Height :

1.75mm

Transistor Element Material :

SILICON

Fall Time (Typ) :

10 ns

FET Feature :

Logic Level Gate

Width :

4mm

Turn On Delay Time :

10 ns

Max Power Dissipation :

3.1W

Number of Elements :

2

Drain to Source Breakdown Voltage :

60V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Weight :

186.993455mg

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Resistance :

58mOhm

Pbfree Code :

yes

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Nominal Vgs :

2.5 V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.3A, 10V

Continuous Drain Current (ID) :

4.3A

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation :

3.1W

Series :

TrenchFET®

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Threshold Voltage :

1V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Base Part Number :

SI9945

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA