SI8900EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

13 Weeks

Rds On Max :

24 mΩ

Base Part Number :

SI8900

Current - Continuous Drain (Id) @ 25°C :

5.4A

Vgs(th) (Max) @ Id :

1V @ 1.1mA

Published :

2013

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

Resistance :

40mOhm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

10-UFBGA, CSPBGA

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

5.4A

Power Dissipation :

1W

Terminal Form :

Ball

Rise Time :

4.5μs

Pin Count :

10

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

TIN SILVER COPPER

FET Type :

2 N-Channel (Dual) Common Drain

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Pins :

10

ECCN Code :

EAR99

Fall Time (Typ) :

4.5 μs

Turn-Off Delay Time :

55 µs

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

7A

Peak Reflow Temperature (Cel) :

260

Drain to Source Resistance :

24mOhm

Number of Terminations :

10

Time@Peak Reflow Temperature-Max (s) :

40