SI7288DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

5 mJ

Number of Pins :

8

Turn-Off Delay Time :

16 ns

Resistance :

19mOhm

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-XDSO-C6

Radiation Hardening :

No

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Rise Time :

14ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

REACH SVHC :

Unknown

Contact Plating :

Tin

Package / Case :

PowerPAK® SO-8 Dual

Drain Current-Max (Abs) (ID) :

10A

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

50A

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 20V

Drain to Source Voltage (Vdss) :

40V

Published :

2014

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Pbfree Code :

yes

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Lead Free :

Lead Free

Base Part Number :

SI7288

Power Dissipation :

3.6W

Mounting Type :

Surface Mount

Series :

TrenchFET®

Pin Count :

8

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Channels :

2

Terminal Form :

C BEND

Turn On Delay Time :

12 ns

Manufacturer Package Identifier :

PowerPAKSO-8

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

19m Ω @ 10A, 10V

Number of Terminations :

6

Nominal Vgs :

1.2 V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

20A

Threshold Voltage :

2.8V

Max Power Dissipation :

15.6W