SI6968BEDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Resistance :

22mOhm

Turn-Off Delay Time :

860 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3mm

Turn On Delay Time :

245 ns

Max Power Dissipation :

1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.4mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Nominal Vgs :

600 mV

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

2

Number of Terminations :

8

Weight :

157.991892mg

RoHS Status :

ROHS3 Compliant

Published :

2008

Pin Count :

8

Element Configuration :

Dual

Mount :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

22m Ω @ 6.5A, 4.5V

Radiation Hardening :

No

Fall Time (Typ) :

510 ns

Continuous Drain Current (ID) :

5.2A

Lead Free :

Lead Free

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Height :

1mm

Power Dissipation :

1W

Base Part Number :

SI6968

FET Type :

2 N-Channel (Dual) Common Drain

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Rise Time :

330ns

Threshold Voltage :

600mV

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes