SI4948BEY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Turn On Delay Time :

10 ns

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Number of Terminations :

8

Number of Channels :

2

Threshold Voltage :

-3V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Power Dissipation :

2.4W

REACH SVHC :

Unknown

Element Configuration :

Dual

Rise Time :

15ns

Turn-Off Delay Time :

50 ns

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.4W

Width :

4mm

Mount :

Surface Mount

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

2.4A

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

-3 V

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-2.4A

Rds On (Max) @ Id, Vgs :

120m Ω @ 3.1A, 10V

DS Breakdown Voltage-Min :

60V

Pin Count :

8

Height :

1.55mm

Resistance :

120mOhm

Base Part Number :

SI4948

Published :

2017

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

35 ns

Weight :

186.993455mg

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Length :

5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR