SI4931DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 350μA

Width :

4mm

Number of Pins :

8

Lead Free :

Lead Free

Power Dissipation :

1.1W

FET Feature :

Logic Level Gate

Fall Time (Typ) :

46 ns

Element Configuration :

Dual

Rise Time :

46ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.9A, 4.5V

Length :

5mm

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pbfree Code :

yes

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.7A

Drain to Source Breakdown Voltage :

-12V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Drain to Source Voltage (Vdss) :

12V

Base Part Number :

SI4931

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Pin Count :

8

Max Power Dissipation :

1.1W

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 4.5V

Continuous Drain Current (ID) :

-8.9A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

6.7A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

230 ns

Height :

1.55mm

Published :

2016

Turn On Delay Time :

25 ns

Number of Terminations :

8

Weight :

186.993455mg