SI4925DDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

16 ns

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

29m Ω @ 7.3A, 10V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

8A

Weight :

186.993455mg

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

REACH SVHC :

No SVHC

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

45 ns

Turn On Delay Time :

10 ns

Published :

2015

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

2

Number of Channels :

2

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

Nominal Vgs :

-3 V

Rise Time :

35ns

Base Part Number :

SI4925

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Continuous Drain Current (ID) :

-7.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Resistance :

29mOhm

Height :

1.75mm

Series :

TrenchFET®

Number of Pins :

8

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Max Power Dissipation :

5W

Terminal Form :

Gull wing

Threshold Voltage :

-1V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

5W

Length :

5mm