SI4599DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Rise Time :

33ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Turn On Delay Time :

44 ns

Radiation Hardening :

No

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Rds On (Max) @ Id, Vgs :

35.5m Ω @ 5A, 10V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Weight :

540.001716mg

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

40V

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Length :

5mm

Power Dissipation :

3W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Base Part Number :

SI4599

Number of Terminations :

8

Width :

4mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

3W 3.1W

Threshold Voltage :

1.4V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

6.8A 5.8A

Contact Plating :

Tin

Continuous Drain Current (ID) :

6.8A

Number of Pins :

8

Height :

1.55mm

Mount :

Surface Mount

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

Number of Channels :

2

Drain Current-Max (Abs) (ID) :

5.6A

Max Power Dissipation :

3.1W

Resistance :

45mOhm

Published :

2014

Fall Time (Typ) :

13 ns