RSD080N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Mount :

Surface Mount

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

80m Ω @ 8A, 10V

Pin Count :

3

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.109Ohm

Drain Current-Max (Abs) (ID) :

8A

Vgs (Max) :

±20V

Number of Pins :

3

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

16A

Transistor Element Material :

SILICON

Published :

2011

Turn On Delay Time :

9 ns

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

13ns

Factory Lead Time :

10 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

60V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

15W Tc

Continuous Drain Current (ID) :

8A

Turn-Off Delay Time :

30 ns

Terminal Position :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V