RN4606(TE85L,F)
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- Mfr.Part #
- RN4606(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN/PNP PREBIAS 0.3W SM6
- Stock
- 17,457
- In Stock ：
- 17,457
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Collector Emitter Voltage (VCEO) :
- 300mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Resistor - Emitter Base (R2) :
- 47k Ω
- Package / Case :
- SC-74, SOT-457
- Element Configuration :
- Dual
- Max Breakdown Voltage :
- 50V
- Packaging :
- Cut Tape (CT)
- Published :
- 2014
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Resistor - Base (R1) :
- 4.7k Ω
- hFE Min :
- 80
- RoHS Status :
- RoHS Compliant
- Continuous Collector Current :
- 100mA
- Number of Elements :
- 2
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 11 Weeks
- Frequency - Transition :
- 200MHz 250MHz
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Polarity :
- NPN, PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- RN4606(TE85L,F)
RN4606(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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