R6030KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N- Channel

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Manufacturer :

Rohm Semiconductor

Gate-Source Voltage (Max) :

±20(V)

Package :

Tube

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

56 nC @ 10 V

Channel Type :

N Channel

FET Feature :

-

Rise Time :

75 ns

Power Dissipation :

305(W)

Packaging :

Rail/Tube

Rad Hardened :

No

Power Dissipation (Max) :

305W (Tc)

Mounting Style :

Through Hole

Brand :

Rohm Semiconductor

Subcategory :

MOSFETs

Continuous Drain Current Id :

30A

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Polarity :

N

RoHS :

Details

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2350 pF @ 25 V

Product Type :

MOSFET

Package / Case :

TO-247-3

Drain-Source On-Volt :

600(V)

Qualification :

-

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Polarity :

N-Channel

Operating Temp Range :

-55C to 150C

Rds On (Max) @ Id, Vgs :

130mOhm @ 14.5A, 10V

Vgs (Max) :

±20V

Series :

-

Mounting :

Through Hole

Base Product Number :

R6030

Number of Elements :

1

Supplier Device Package :

TO-247

FET Type :

N-Channel

Number of Channels :

1 Channel

Continuous Drain Current :

30(A)

Package Type :

TO-247

Type :

Power MOSFET

Pin Count :

3 +Tab

Drain to Source Voltage (Vdss) :

600 V

Product Status :

Active

Operating Temperature Classification :

Military

Operating Temperature :

150°C (TJ)