PUMH10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Surface Mount :

yes

Current - Collector Cutoff (Max) :

1μA

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

100mV

Power - Max :

300mW

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Height :

1.1mm

Terminal Form :

Gull wing

Ambient Temperature Range High :

150°C

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Transistor Application :

SWITCHING

Resistor - Base (R1) :

2.2k Ω

Mounting Type :

Surface Mount

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Base Part Number :

P*MH10

Resistor - Emitter Base (R2) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Factory Lead Time :

4 Weeks

Polarity :

NPN

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

200mW

Number of Terminations :

6

hFE Min :

100

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2011