PMGD370XN,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

440m Ω @ 200mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

HTS Code :

8541.29.00.75

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.65nC @ 4.5V

Pin Count :

6

Number of Terminations :

6

JESD-609 Code :

e3

Number of Elements :

2

Series :

TrenchMOS™

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

740mA

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power - Max :

410mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Drain Current-Max (Abs) (ID) :

0.74A

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

37pF @ 25V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.44Ohm

Published :

1997

Reach Compliance Code :

Compliant