PMBFJ308,215
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- Mfr.Part #
- PMBFJ308,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- JFET N-CH 25V 250MW SOT23
- Stock
- 41,246
- In Stock ：
- 41,246
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - JFETs
- Additional Feature :
- LOW NOISE
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 250mW
- FET Technology :
- JUNCTION
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max (Abs) :
- 0.25W
- Voltage - Breakdown (V(BR)GSS) :
- 25V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 2.5 pF
- Configuration :
- Single
- JESD-30 Code :
- R-PDSO-G3
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- Depletion Mode
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Voltage - Cutoff (VGS off) @ Id :
- 1V @ 1μA
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 5pF @ 10V
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Published :
- 2001
- Resistance - RDS(On) :
- 50Ohm
- FET Type :
- N-Channel
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 12mA @ 10V
- DS Breakdown Voltage-Min :
- 25V
- Highest Frequency Band :
- VERY HIGH FREQUENCY B
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-236AB
- Datasheets
- PMBFJ308,215
PMBFJ308,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at
PMBFJ308,215 Description
The PMBFJ308,215 is a 25V Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package. The PMBFJ308,215 can be applied in AM input stage in car radios, VHF amplifiers, and Oscillators and mixers. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor PMBFJ308,215 is in the SOT23 package with 250mW power dissipation.
PMBFJ308,215 Features
Low noise
Interchangeability of drain and source connections
High gain.
VGSO gate-source voltage open drain - 25 V
VGDO gate-drain voltage open source - 25 V
PMBFJ308,215 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
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