PEMD24,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Published :

2005

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

6

Number of Elements :

2

Polarity :

NPN, PNP

Radiation Hardening :

No

Max Collector Current :

20mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

100k Ω

Current - Collector Cutoff (Max) :

1μA

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Element Configuration :

Dual

Max Power Dissipation :

300mW

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-563, SOT-666

Resistor - Base (R1) :

100k Ω

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount