PEMD2,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Number of Pins :

6

Terminal Form :

Flat

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Radiation Hardening :

No

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Power Dissipation :

300mW

hFE Min :

60

Collector Emitter Voltage (VCEO) :

50V

Published :

2011

Emitter Base Voltage (VEBO) :

10V

Pin Count :

6

Polarity :

NPN, PNP

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

22k Ω

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Base Part Number :

MD2

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

22k Ω

Current - Collector Cutoff (Max) :

1μA

Number of Terminations :

6

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C