PEMB20,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Max Collector Current :

100mA

Resistor - Base (R1) :

2.2k Ω

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Factory Lead Time :

4 Weeks

Published :

2009

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Elements :

2

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

2.2k Ω

Lead Free :

Lead Free

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Number of Terminations :

6