PCP1103-TD-H
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- Mfr.Part #
- PCP1103-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A PCP
- Stock
- 834
- In Stock ：
- 834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 450MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Number of Pins :
- 3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Power - Max :
- 3.5W
- Length :
- 4.5mm
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 375mV @ 15mA, 750mA
- Package / Case :
- TO-243AA
- Max Collector Current :
- 1.5A
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- Max Frequency :
- 1MHz
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -375mV
- Width :
- 2.5mm
- Terminal Form :
- Flat
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 450MHz
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 1.3W
- Pin Count :
- 3
- JESD-609 Code :
- e6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Datasheets
- PCP1103-TD-H
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PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PCP1103-TD-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -375mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 375mV @ 15mA, 750mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 450MHz.During maximum operation, collector current can be as low as 1.5A volts.
PCP1103-TD-H Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -375mV
the vce saturation(Max) is 375mV @ 15mA, 750mA
the emitter base voltage is kept at -5V
a transition frequency of 450MHz
PCP1103-TD-H Applications
There are a lot of ON Semiconductor
PCP1103-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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