NX3008PBKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2011

Factory Lead Time :

4 Weeks

Rds On (Max) @ Id, Vgs :

4.1 Ω @ 200mA, 4.5V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Terminations :

6

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

0.72nC @ 4.5V

Turn On Delay Time :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 15V

Continuous Drain Current (ID) :

220mA

Surface Mount :

yes

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

38 ns

Power Dissipation :

390mW

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Terminal Finish :

Tin (Sn)

Rise Time :

30ns

Series :

Automotive, AEC-Q101, TrenchMOS™

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Max Dual Supply Voltage :

-30V

FET Type :

2 P-Channel (Dual)

Pin Count :

6

Mounting Type :

Surface Mount

Turn-Off Delay Time :

65 ns

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G3

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Max Power Dissipation :

500mW