NX3008NBKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

400mA

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

FET Feature :

Logic Level Gate

Power - Max :

500mW

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 15V

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

0.39W

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Surface Mount :

yes

Mounting Type :

Surface Mount

Number of Terminations :

6

Factory Lead Time :

4 Weeks

FET Type :

2 N-Channel (Dual)

Published :

2011

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Finish :

Tin (Sn)

Reference Standard :

AEC-Q101; IEC-60134

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 350mA, 4.5V

Drain Current-Max (Abs) (ID) :

0.4A

Packaging :

Tape and Reel (TR)