NTE2364
- Mfr.Part #
- NTE2364
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92L
- Stock
- 972
- In Stock :
- 972
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-92L
- Package Shape :
- Round
- Collector Current-Max (IC) :
- 2 A
- Series :
- -
- Transistor Element Material :
- SILICON
- Manufacturer :
- NTE Electronics
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA, 2V
- Transistor Type :
- PNP
- Package :
- Bag
- Number of Elements :
- 1
- Subcategory :
- Other Transistors
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 1 W
- Power - Max :
- 1 W
- Terminal Form :
- THROUGH-HOLE
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 1A
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 2 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Surface Mount :
- No
- Frequency - Transition :
- 150MHz
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.75
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- DC Current Gain-Min (hFE) :
- 40
- Collector-Emitter Voltage-Max :
- 50 V
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- NTE2364

PNP 150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-226-3, TO-92-3 Long Body Through Hole
NTE2364 Overview
This device has a DC current gain of 140 @ 100mA, 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92L.Maximum collector-emitter voltage can be set to 50 V.Detection of Collector Emitter Breakdown at 50 V maximal voltage is present.
NTE2364 Features
the DC current gain for this device is 140 @ 100mA, 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the supplier device package of TO-92L
NTE2364 Applications
There are a lot of NTE Electronics, Inc
NTE2364 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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