NTE172A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA, 5V

Series :

-

Product Status :

Active

Emitter-Base Voltage :

12(V)

Current - Collector (Ic) (Max) :

300 mA

Rad Hardened :

No

Manufacturer :

NTE Electronics

Power Dissipation :

0.4(W)

Current - Collector Cutoff (Max) :

100nA (ICBO)

Mounting Type :

Through Hole

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

NPN

Operating Temperature :

-65°C ~ 125°C (TJ)

Number of Elements :

1

Collector-Emitter Voltage-Max :

40 V

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 200μA, 200mA

Frequency - Transition :

60MHz

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Collector Current (DC) :

0.3(A)

Pin Count :

3

Configuration :

Single

Power Dissipation-Max (Abs) :

0.4 W

Base-Emitter Saturation Voltage (Max) :

1.6(V)

Voltage - Collector Emitter Breakdown (Max) :

40 V

JESD-30 Code :

O-PBCY-W3

Operating Temperature Classification :

Military

HTS Code :

8541.21.00.95

DC Current Gain-Min (hFE) :

20000

ECCN Code :

EAR99

Number of Terminals :

3

Collector Current-Max (IC) :

0.3 A

Subcategory :

Other Transistors

Operating Temp Range :

-65C to 125C

Surface Mount :

No

Transistor Application :

SWITCHING

Power - Max :

400 mW

JEDEC-95 Code :

TO-92

Transistor Element Material :

SILICON

Supplier Device Package :

TO-92

Maximum Collector Cut-off Current :

20

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Reach Compliance Code :

Unknown

DC Current Gain :

7000@2MA@5V

Package :

Bag

Mounting :

Through Hole

Collector-Base Voltage :

40(V)

Polarity/Channel Type :

NPN

Package Type :

TO-92

Package Shape :

Round

Transistor Type :

NPN - Darlington