NSBC115TPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO

Package / Case :

SOT-963

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Max Power Dissipation :

339mW

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Pin Count :

6

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Published :

2008

Element Configuration :

Dual

hFE Min :

160

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Base Part Number :

NSBC1*

Min Operating Temperature :

-55°C

Number of Pins :

6

Number of Terminations :

6

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Max Collector Current :

100mA

Resistor - Base (R1) :

100k Ω

Polarity :

NPN, PNP

ECCN Code :

EAR99