MUN5330DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Factory Lead Time :

8 Weeks

Published :

2006

Max Power Dissipation :

250mW

Current - Collector Cutoff (Max) :

500nA

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

hFE Min :

3

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Base Part Number :

MUN53**DW1

Element Configuration :

Dual

Height :

1mm

Emitter Base Voltage (VEBO) :

6V

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

187mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

1k Ω

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Gull wing

Current Rating :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Lead Free :

Lead Free

Radiation Hardening :

No

Width :

1.35mm

Max Breakdown Voltage :

50V

Surface Mount :

yes

JESD-609 Code :

e3

Length :

2.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

250mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Number of Terminations :

6

Resistor - Base (R1) :

1k Ω

Operating Supply Voltage :

50V

Continuous Collector Current :

100mA

ECCN Code :

EAR99

Pin Count :

6

Number of Pins :

6

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Frequency :

10kHz

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount