MUN5316DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Contact Plating :

Tin

Pin Count :

6

JESD-609 Code :

e3

Number of Elements :

2

Surface Mount :

yes

Max Output Current :

100mA

Max Power Dissipation :

250mW

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

4.7k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Current Rating :

100mA

Power Dissipation :

187mW

hFE Min :

160

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

2 Weeks

Polarity :

NPN, PNP

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

500nA

Lead Free :

Lead Free

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Base Part Number :

MUN53**DW1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Form :

Gull wing

Number of Terminations :

6

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING