MRF9030LR1
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- Mfr.Part #
- MRF9030LR1
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-360
- Datasheet
- Download
- Description
- FET RF 68V 945MHZ NI-360
- Stock
- 1,519
- In Stock ：
- 1,519
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Frequency :
- 945MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated :
- 68V
- Published :
- 2002
- Base Part Number :
- MRF9030
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Voltage - Test :
- 26V
- Gain :
- 19dB
- Power - Output :
- 30W
- Factory Lead Time :
- 15 Weeks
- Current - Test :
- 250mA
- Package / Case :
- NI-360
- Transistor Type :
- LDMOS
- Datasheets
- MRF9030LR1
MRF9030LR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
The NXP Semiconductors MRF9030LR1 is a high-performance RF MOSFET transistor designed for use in radio frequency (RF) applications. It is a N-channel enhancement-mode MOSFET with a maximum drain-source voltage of 68V and a maximum drain current of 360mA. The device is housed in a 3-pin NI-360 T/R package and is suitable for use in a wide range of RF applications, including cellular base stations, wireless LANs, and RF amplifiers.
Features:
• High-performance RF MOSFET transistor
• N-channel enhancement-mode MOSFET
• Maximum drain-source voltage of 68V
• Maximum drain current of 360mA
• 3-pin NI-360 T/R package
• Suitable for use in a wide range of RF applications
Applications:
• Cellular base stations
• Wireless LANs
• RF amplifiers
• RF power amplifiers
• RF switches
• RF mixers
• RF detectors
• RF oscillators
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