MRF581AG

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

15V

Terminal Position :

Radial

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Published :

2004

Radiation Hardening :

No

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Number of Terminations :

4

Power - Max :

1.25W

Transistor Application :

AMPLIFIER

Number of Elements :

1

Operating Temperature :

150°C TJ

Package / Case :

Macro-X

Collector Base Voltage (VCBO) :

30V

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Collector-Base Capacitance-Max :

3pF

Transition Frequency :

5000MHz

Max Power Dissipation :

1.25W

Base Part Number :

MRF581

Frequency - Transition :

5GHz

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Packaging :

Bulk

Number of Pins :

4

JESD-609 Code :

e1

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Max Collector Current :

200mA

Pin Count :

4

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

15V

Configuration :

Single

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

13dB ~ 15.5dB

Transistor Type :

NPN