MMBTA06-7
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- Mfr.Part #
- MMBTA06-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 40,987
- In Stock ：
- 40,987
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Weight :
- 7.994566mg
- Published :
- 2009
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Surface Mount
- Length :
- 3.05mm
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 4V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 310mW
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 100nA
- Continuous Collector Current :
- 500mA
- Width :
- 1.4mm
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- MMBTA06
- Collector Emitter Saturation Voltage :
- 250mV
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 150°C
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.1mm
- Termination :
- SMD/SMT
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Datasheets
- MMBTA06-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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