MMBT6428LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Frequency :

700MHz

Transistor Application :

AMPLIFIER

Power Dissipation :

300mW

Max Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

JESD-609 Code :

e3

Length :

3.04mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Width :

2.64mm

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Base Part Number :

MMBT6428

Current Rating :

200mA

Transistor Element Material :

SILICON

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

200mA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Height :

1.11mm

Gain Bandwidth Product :

700MHz

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Mounting Type :

Surface Mount

Contact Plating :

Tin

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Transition Frequency :

100MHz

Terminal Position :

Dual

Published :

2005

hFE Min :

250

Pin Count :

3

Number of Terminations :

3

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

225mW

Collector Emitter Saturation Voltage :

600mV

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

100nA