MMBT6427LT1
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- Mfr.Part #
- MMBT6427LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS DARL NPN 40V SOT23
- Stock
- 3,894
- In Stock ：
- 3,894
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Max Power Dissipation :
- 225mW
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 12V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Transition Frequency :
- 130MHz
- Current - Collector Cutoff (Max) :
- 1μA
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 10000
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Collector Emitter Saturation Voltage :
- 1.2V
- Current Rating :
- 600mA
- Termination :
- SMD/SMT
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 40V
- Height :
- 1.01mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Length :
- 3.04mm
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MMBT6427
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 40V
- Number of Terminations :
- 3
- Datasheets
- MMBT6427LT1
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6427LT1G Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT6427LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 600mA
a transition frequency of 130MHz
MMBT6427LT1G Applications
There are a lot of ON Semiconductor
MMBT6427LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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