MMBT5551LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Published :

2007

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

160V

VCEsat-Max :

0.2 V

Current Rating :

600mA

Surface Mount :

yes

Width :

2.64mm

Collector Base Voltage (VCBO) :

180V

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

150mV

Current - Collector Cutoff (Max) :

100nA

Voltage - Rated DC :

160V

Number of Terminations :

3

Number of Pins :

3

Radiation Hardening :

No

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

hFE Min :

80

Base Part Number :

MMBT5551

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

3.04mm

Height :

1.11mm

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Terminal Form :

Gull wing

Power Dissipation :

300mW

Max Breakdown Voltage :

160V

Terminal Position :

Dual

Max Collector Current :

600mA

JESD-609 Code :

e3

Transistor Type :

NPN

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Power Dissipation :

225mW

Collector Emitter Voltage (VCEO) :

160V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Pin Count :

3

Element Configuration :

Single

Mounting Type :

Surface Mount