KSP2222ATA
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- Mfr.Part #
- KSP2222ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 27,532
- In Stock ：
- 27,532
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 75V
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 600mA
- Transition Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 40V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Weight :
- 240mg
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Width :
- 3.86mm
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Turn Off Time-Max (toff) :
- 285ns
- Length :
- 4.58mm
- Published :
- 2004
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Height :
- 4.58mm
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 40V
- Current Rating :
- 600mA
- hFE Min :
- 100
- Voltage - Rated DC :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- KSP2222
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- KSP2222ATA
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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